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| Speed TEMPFET BTS244Z Speed TEMPFET(R) (R) N-Channel Enhancement mode Logic Level Input Analog driving possible Fast switching up to 1 MHz Potential-free temperature sensor with thyristor characteristics Overtemperature protection * Green Product (RoHS Compliant) Avalanche rated 1 5 PG-TO220-5-62 PG-TO220-5-3 * AEC Qualified RDS(on) 13 m Package PG-TO220-5-3 PG-TO220-5-62 PG-TO-220-5-43 D Pin 3 and TAB PG-TO220-5-43 Type BTS 244 Z VDS 55 V G Pin 1 A Pin 2 Temperature Sensor K Pin 4 S Pin 5 Pin 1 2 3 4 5 Symbol G A D K S Function Gate Anode Temperature Sensor Drain Cathode Temperature Sensor Source Data Sheet 1 Rev.1.3, 2009-12-04 Speed TEMPFET BTS244Z Maximum Ratings Parameter Drain source voltage Drain-gate voltage, RGS = 20 k Gate source voltage Nominal load current (ISO 10483) VGS = 4.5 V, VDS VGS = 10 V, VDS 0.5 V, TC = 85 C 0.5 V, TC = 85 C ID ID puls EAS Ptot Tj Tjpeak Tstg Symbol VDS V Value 55 55 20 A 19 26 35 188 1.65 170 -40 ...+175 200 -55 ... +150 E 40/150/56 J W C Unit V DGR VGS ID(ISO) Continuous drain current 1) TC = 100 C, VGS = 4.5V Pulsed drain current Avalanche energy, single pulse ID = 19 A, RGS = 25 Power dissipation TC = 25 C Operating temperature 2) Peak temperature ( single event ) Storage temperature DIN humidity category, DIN 40 040 IEC climatic category; DIN IEC 68-1 1current limited by bond wire 2Note: Thermal trip temperature of temperature sensor is below 175C Data Sheet 2 Rev.1.3, 2009-12-04 Speed TEMPFET BTS244Z Thermal Characteristics Parameter Characteristics junction - case: Thermal resistance @ min. footprint Thermal resistance @ 6 cm2 cooling area 1) Electrical Characteristics Parameter at Tj = 25C, unless otherwise specified Static Characteristics Drain-source breakdown voltage VGS = 0 V, ID = 0.25 mA Gate threshold voltage, VGS = VDS ID = 130 A ID = 250 A Zero gate voltage drain current VDS = 50 V, VGS = 0 V, Tj = -40 C VDS = 50 V, VGS = 0 V, Tj = 25 C VDS = 50 V, VGS = 0 V, Tj = 150 C Gate-source leakage current VGS = 20 V, VDS = 0 V, Tj = 25 C VGS = 20 V, VDS = 0 V, Tj = 150 C Drain-Source on-state resistance VGS = 4.5 V, ID = 19 A VGS = 10 V, ID = 19 A RDS(on) 16 11.5 18 13 IGSS 10 20 100 100 m IDSS 0.1 0.1 1 100 nA VGS(th) 1.2 1.6 1.65 2 A V(BR)DSS 55 V Symbol min. Values typ. max. Unit Symbol min. RthJC Rth(JA) Rth(JA) - Values typ. 33 max. 0.88 62 40 Unit K/W 1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for drain connection. PCB mounted vertical without blown air. Data Sheet 3 Rev.1.3, 2009-12-04 Speed TEMPFET BTS244Z Electrical Characteristics Parameter at Tj = 25C, unless otherwise specified Dynamic Characteristics Forward transconductance VDS>2*ID *RDS(on)max , ID = 35 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time VDD = 30 V, VGS = 4.5 V, ID = 47 A, RG = 2.2 Rise time VDD = 30 V, VGS = 4.5 V, ID = 47 A, RG = 2.2 Turn-off delay time VDD = 30 V, VGS = 4.5 V, ID = 47 A, RG = 2.2 Fall time VDD = 30 V, VGS = 4.5 V, ID = 47 A, RG = 2.2 tf 25 40 td(off) 40 60 tr 70 105 td(on) 15 25 ns Crss 320 400 Coss 600 750 gfs Ciss 25 2130 2660 S pF Symbol min. Values typ. max. Unit Gate Charge Characteristics Gate charge at threshold VDD = 40 V, ID = 0.1 A, VGS = 0 to 1 V Gate charge at 5.0 V VDD = 40 V, ID = 47 A, V GS = 0 to 5 V Gate charge total VDD = 40 V, ID = 47 A, V GS = 0 to 10 V Gate plateau voltage VDD = 40 V, ID = 47 A Data Sheet 4 Rev.1.3, 2009-12-04 Qg(th) Qg(5) Qg(total) V(plateau) - 2.5 50 85 4.5 3.8 75 130 - nC V Speed TEMPFET BTS244Z Electrical Characteristics Parameter at Tj = 25C, unless otherwise specified Reverse Diode Inverse diode continuous forward current TC = 25 C Inverse diode direct current,pulsed TC = 25 C Inverse diode forward voltage VGS = 0 V, IF = 94 A Reverse recovery time VR = 30 V, IF =IS, diF/dt = 100 A/s Reverse recovery charge VR = 30 V, IF =IS, diF/dt = 100 A/s Sensor Characteristics For temperature sensing, i.e. temperature protection, please consider application note "Temperature sense concept - Speed TEMPFET". For short circuit protection please consider application note "Short circuit behaviour of the Speed TEMPFET family". All application notes are available at http://www.infineon.com/tempfet/ Symbol min. IS IFM VSD trr Qrr 35 188 - Values typ. 1.25 110 0.23 max. 1.8 165 0.35 Unit A V ns C Forward voltage IAK(on) = 5 mA, Tj = -40...+150 C IAK(on) = 1.5 mA, Tj = 150 C Sensor override tP = 100 s, Tj = -40...+150 C Forward current Tj = -40...+150 C Sensor override tP = 100 s, Tj = -40...+150 C VAK(on) IAK(on) 1.3 1.4 0.9 10 5 600 V mA Data Sheet 5 Rev.1.3, 2009-12-04 Speed TEMPFET BTS244Z Electrical Characteristics Parameter at Tj = 25C, unless otherwise specified Sensor Characteristics Temperature sensor leakage current Tj = 150 C Min. reset pulse duration 1) Tj = -40...+150 C, IAK(on) = 0.3 mA, VAK(Reset)<0.5V VAK Recovery time1)2) Tj = -40...+150 C, IAK(on) = 0.3 mA Characteristics Holding current, VAK(off) = 5V Tj = 25 C Tj = 150 C IAK(hold) Symbol min. IAK(off) treset 100 Values typ. max. 4 - Unit A s trecovery - - 150 mA 0.05 0.05 160 0.5 0.3 170 2.5 C s V Thermal trip temperature VTS = 5V TTS(on) toff VAK(reset) 150 0.5 0.5 Turn-off time (Pin G+A and K+S connected) VTS = 5V, ITS(on) = 2 mA Reset voltage Tj = -40...+150C Sensor recovery behaviour: S ensor R E S E T V A K [V ] 5 4 tre s e t 0 S ensor O N R eset t re c o v e ry OFF 1See diagram Sensor recovery behaviour 2Time after reset pulse until V AK reaches 4V again Data Sheet 6 Rev.1.3, 2009-12-04 Speed TEMPFET BTS244Z 1 Maximum allowable power dissipation Ptot = f(TC) 180 2 Drain current ID = f(TC ); VGS 40 A 4.5V 140 120 100 30 Ptot ID 80 60 40 20 0 -40 C 25 20 15 10 5 0 40 80 120 180 0 0 20 40 60 80 100 120 140 C 180 TC TC 3 Typ. transient thermal impedance ZthJA=f(tp ) @ 6 cm2 cooling area 4 Transient thermal impedance ZthJC = f (tp ) Parameter: D=tp /T 10 2 K/W D=0.5 parameter : D = tp /T 10 1 K/W 10 0 D=0.5 10 1 Z thJC 0.2 Z thJA 0.1 0.05 0.2 10 -1 0.1 0.05 0.02 10 0 0.02 0.01 10 -2 0.01 10 -1 Single pulse 10 -3 Single pulse 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 s 10 3 10 -4 10 10 10 10 -8 -7 -6 -5 10 10 10 10 -4 -3 -2 -1 10 10 0 1 s 10 3 tp Data Sheet 7 tp Rev.1.3, 2009-12-04 Speed TEMPFET BTS244Z 5 Safe operating area ID=f(VDS ); D=0.01; TC =25C; VGS =4.5V 6 Typ. output characteristic ID = f(VDS); Tj =25C Parameter: VGS 180 A 10V 7V 140 120 6V ID ID 100 80 60 40 20 0 0 5V 4.5V 4V 3.5V 3V 1 2 V 4 VDS 7 On-state resistance RON = f(Tj ); ID=19A; VGS = 4.5V 40 8 On-state resistance RON = f(Tj ); ID=19A; VGS = 10V 30 m max. m RDS(on) max. RDS(on) 30 typ. 20 25 typ. 20 15 15 10 10 5 5 0 -50 -25 0 25 50 75 100 125 C 175 0 -50 -25 0 25 50 75 100 125 C 175 Tj Data Sheet 8 Tj Rev.1.3, 2009-12-04 Speed TEMPFET BTS244Z 9 Typ. transfer characteristics ID = f(VGS); VDS = 12V; Tj = 25C 100 A 10 Typ. input threshold voltage VGS(th) = f(Tj); VDS =VGS Parameter: ID 2.4 V 80 2.0 VGS(th) 1.8 130mA 70 1.6 1.4 1.2 1.0 0.8 0.6 130A 13mA ID 60 50 40 30 20 1.3mA 0.4 10 0 0 0.2 1 2 3 V 5 0.0 -50 -25 0 25 50 75 100 125 C 175 VGS Tj 11 Typ. capacitances C = f(VDS); VGS =0 V, f=1 MHz 10 1 12 Typ. forward charcteristics of reverse diode IF = f(VSD ) tp = 80s (spread); Parameter: Tj 10 2 A nF Ciss 150C 10 1 25C C 10 0 Coss IF 10 0 Crss 10 -1 0 4 8 12 16 20 24 28 32 V 40 10 -1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 V 1.6 VDS Data Sheet 9 VSD Rev.1.3, 2009-12-04 Speed TEMPFET BTS244Z 13 Typ. gate charge VGS = f(QGate); ID puls = 47A BTS 244 Z 14 Drain-source break down voltage V(BR)DSS = f(Tj ) 66 V 16 V 12 V(BR)DSS 62 VGS 10 0,2 VDS max 0,8 VDS max 60 8 58 6 56 4 54 2 52 0 0 20 40 60 80 100 nC 140 QGate 50 -40 0 40 80 120 C 180 Tj Data Sheet 10 Rev.1.3, 2009-12-04 Speed TEMPFET BTS244Z Package Outlines 1 Package Outlines 9.9 0.2 9.5 0.2 7.5 6.6 A 4.4 1.3 +0.1 -0.02 B 17.5 0.3 15.6 0.3 13 2.8 0.2 3.7 -0.15 9.2 0.2 8.4 0.3 1) 8.6 0.3 C 0...0.15 10.2 0.3 0.50.1 5 x 0.8 0.1 2.4 M 4 x 1.7 0.25 ABC 4.50.3 1) Shear and punch direction no burrs this surface Back side, heatsink contour All metal surfaces tin plated, except area of cut. Figure 1 PG-TO220-5-3 9.9 8.0 A 7.5 (1.3) 6.6 4.4 1.3 -0.02 B 0.05 2.4 6.5 1) +0.1 (14.1) 10.5 0.15 9.2 0.2 1.5 0.25 0...0.15 +0.1 3.6 0.3 0.1 0.5 +0.15 5 +3 5 x 0.8 -0.03 4 x 1.7 0.1 B 0.25 M AB 1) Shear and punch direction no burrs this surface. Back side, heatsink contour All metal surfaces tin plated, except area of cut. P-TO220-5-62-PO V01 Figure 2 PG-TO220-5-62 Data Sheet 11 3.3 0.3 0.05 Rev.1.3, 2009-12-04 Speed TEMPFET BTS244Z Package Outlines 9.9 0.2 9.5 0.2 7.5 6.6 2.8 0.2 A 4.4 1.3 +0.1 -0.02 B 17.5 0.3 15.6 0.3 13 3.7 -0.15 1) C 0...0.15 13.5 0.5 0.5 0.1 5 x 0.8 0.1 2.4 M 4 x 1.7 0.25 ABC 1) Shear and punch direction no burrs this surface Back side, heatsink contour All metal surfaces tin plated, except area of cut. Figure 3 PG-TO220-5-43 Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). For further information on alternative packages, please visit our website: http://www.infineon.com/packages. Data Sheet 12 9.2 0.2 0.05 Dimensions in mm Rev.1.3, 2009-12-04 Speed TEMPFET BTS244Z Revision History 2 Revision 1.3 1.2 1.1 Revision History Date 2009-12-04 2009-07-31 2008-11-10 Changes updated package drawing of PG-TO220-5-62 removed 100ms and DC line in SOA diagram all pages: added new Infineon logo Initial version of RoHS-compliant derivate of the BTS244Z Page 1 and 12: added RoHS compliance statement and Green product feature Page 1, 11 and 12: Package changed to RoHS compliant version page 13: added Revision history page 14: update of disclaimer Data Sheet 13 Rev.1.3, 2009-12-04 Edition 2009-12-04 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. |
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